ILD205T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 package
Features
Two Channel Coupler
SOIC-8A Surface Mountable Package
Standard Lead Spacing of .05 "
Available only on Tape and Reel Option (Conforms to EIA Standard 481-2)
Isolation Test Voltage, 3000 VRMS
Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
Lead-free component
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code Y
Description
The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a standard SOIC-8A small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.
A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard of 30 V
Order Information
| Part | Remarks |
| ILD205T | CTR 40 - 80 %, SOIC-8 |
| ILD206T | CTR 63 - 125 %, SOIC-8 |
| ILD207T | CTR 100 - 200 %, SOIC-8 |
| ILD211T | CTR > 20 %, SOIC-8 |
| ILD213T | CTR > 100 %, SOIC-8 |
| ILD217T | CTR > 100 %, SOIC-8 |
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
| Parameter | Test condition | Symbol | Value | Unit |
| Peak reverse voltage | | VR | 6.0 | V |
| Peak pulsed current | 1.0 µs, 300 pps | | 1.0 | A |
| Continuous forward current per channel | | | 30 | mA |
| Power dissipation | | Pdiss | 50 | mW |
| Derate linearly from 25 °C | | | 0.66 | mW/°C |
Output
| Parameter | Test condition | Symbol | Value | Unit |
| Collector-emitter breakdown voltage | | BVCEO | 70 | V |
| Emitter-collector breakdown voltage | | BVECO | 7.0 | V |
| Power dissipation per channel | | Pdiss | 125 | mW |
| Derate linearly from 25 °C | | | 1.67 | mW/°C |
Coupler
| Parameter | Test condition | Symbol | Value | Unit |
| Total package dissipation ambient (2 LEDs + 2 detectors, 2 channels) | | Ptot | 300 | mW |
| Derate linearly from 25 °C | | | 4.0 | mW/°C |
| Storage temperature | | Tstg | - 55 to + 150 | °C |
| Operating temperature | | Tamb | - 55 to + 100 | °C |
| Soldering time from 260 °C | | Tsld | 10 | sec. |
Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
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ILD205T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 package Images
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